Silicon Carbide Device Assembly and Test
SiC MOSFET and SiC Schottky die assembly for 175 °C operation: high-temperature die attach, copper bonding, high-Tg moulding and two-point RDS(on) test.
SiC assembly differs from silicon assembly in three places: the die is thinner and more brittle, the junction runs at 175 °C instead of 150 °C, and the gate oxide is sensitive to screening escapes. OCENME assembles 650 V and 800 V SiC MOSFETs and 650 V SiC Schottky diodes with high-temperature die attach, copper bonding and 100% test at two gate voltages.
When this process applies
This page covers assembly of SiC MOSFET and SiC Schottky die into TO-252, TO-220F, TO-220AC and TO-247 outlines, including high-temperature attach and 175 °C test. It does not cover SiC modules, sintered substrates, or 1200 V SiC parts, which are not in the current datasheet set.
Technical specifications
| Devices assembled | 650 V and 800 V SiC MOSFETs; 650 V SiC Schottky diodes |
|---|---|
| Junction rating | 175 °C maximum |
| Die attach | High-temperature solder or sintered attach selected per die |
| Interconnect | Copper wire bonding with pull and shear monitoring per shift |
| Moulding | High-Tg compound, post-mould cure, isolation test |
| Test | RDS(on) at 15 V and 18 V, VGS(th), BVDSS, IDSS and gate leakage at 100% |
| Screening | HTRB and H3TRB batches available with per-lot reporting |
| Outlines | TO-252, TO-220F, TO-220AC, TO-220FAC, TO-247 |
Where it is the right choice
- SiC MOSFET and SiC Schottky devices for PFC, LLC and charger designs
- Applications where the supplier must state gate-oxide screening data
- Designs that need the same supplier for SiC and silicon to simplify qualification
Where it is the wrong choice
Stating this explicitly matters more than a capability list: if your part falls into one of these categories, another process will cost you less.
- SiC power modules or multi-die modules
- 1200 V SiC — not in our current datasheet set
- Automotive-grade SiC requiring AEC-Q101
- Applications where the gate driver cannot provide a negative off-bias; we will reject the design rather than ship into a known failure mode
Equipment
- High-temperature die attach stations
- Copper wire bonders with low-loop-height capability
- X-ray inspection (YXLON) for void and wire sweep
- C-SAM (Sonoscan PVA) for attach voiding
- High-temperature test handlers for 175 °C read points
- HTRB and H3TRB chambers with bias monitoring
Process questions
Why is SiC die attach different from silicon?
The die is thinner, so mechanical stress from the attach layer can crack it, and the junction runs 25 °C hotter, so a solder that is fine for silicon creeps or voids at 175 °C. We select the attach per die thickness and target thermal resistance and verify voiding by X-ray and C-SAM rather than assuming a silicon process carries over.
Do you test gate oxide screening data from the foundry?
We require gate-oxide screening data with each SiC die lot and record it against the assembly lot, because gate-oxide defects are latent — they pass final test and fail in the field. If a foundry lot arrives without screening data, we hold it rather than build it.
Can you supply SiC in TOLL or PDFN?
Not as a catalogue item. Our plant qualifies TOLL4 and PDFN 5×6 for silicon, and SiC in those outlines is a development project with tooling and qualification time. Ask with volume and target date; we will give a schedule rather than a maybe.
What is the practical benefit of 175 °C rating?
It buys thermal headroom, not permission to run hotter. A 175 °C device in a 60 °C ambient with a modest heatsink can carry the same current with a smaller derating margin, which usually means a smaller package for the same output. Designs that treat 175 °C as an operating target rather than a limit tend to fail at the solder joint first.
Related capabilities and products
Reliability Testing
Reliability testing establishes whether a packaged device survives the thermal, electrical and humidity stress of its application over time. OCENME runs nine test types in-house to JESD22 methods — HTRB, H3TRB, HT/HU, HTSL, temperature cycling, thermal shock, solderability, RSH and HPC — with X-ray, C-SAM and die shear capability for failure analysis..
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