Precision Components We Manufacture

Four product families, all produced to customer drawings. Every page states tolerance, order quantity, lead time and material range before anything else, because those are the four numbers that decide whether a supplier fits your requirement.

Summary

We manufacture custom components in four categories: CNC machined parts with prismatic geometry, CNC turned components with rotational symmetry, sheet metal assemblies formed from flat stock, and machined prototypes at quantities from one unit. Tolerances range from ±0.005 mm on critical machined features to ±0.1 mm on formed sheet metal, with order quantities from 1 to 100,000 units and lead times of 3 to 18 working days.

Low & Medium Voltage MOSFETs

A low voltage power MOSFET is an N-channel switching device used below 200 V, where conduction loss dominates and on-resistance decides efficiency. OCENME supplies 30 V to 200 V trench and shielded-gate (SGT) MOSFETs from 1.6 mΩ on-resistance and 220 A continuous drain current, in TO-220, TO-252, TO-263, TO-262 and PDFN 5×6 packages, packaged in Shenzhen at 50 million units per month..

9 A to 220 A at TC = 25 °C
N-channel enhancement mode; P-channel on request

Specifications and process

High Voltage & Super Junction MOSFETs

A high voltage MOSFET is an N-channel switch rated between 400 V and 800 V, used in offline power supplies where the drain sees rectified mains plus leakage-inductance ringing. OCENME supplies 500 V to 700 V planar MOSFETs and 650 V super junction MOSFETs from 150 mΩ, at continuous drain currents of 7 A to 28 A, in TO-220F, TO-262F, TO-263 and TO-252 packages..

7 A to 28 A at TC = 25 °C
TO-220F, TO-220F-2L, TO-262F, TO-263, TO-252, TO-247, TO-3P

Specifications and process

SiC MOSFETs

A silicon carbide MOSFET is a wide-bandgap switch that replaces a silicon super junction device at the same voltage while removing most of the body-diode reverse recovery loss. OCENME supplies 650 V and 800 V SiC MOSFETs from 11 A to 20 A in TO-252 and TO-220F, with a 175 °C junction rating, for PFC stages, LLC converters and chargers running above 30 kHz..

11 A to 20 A at TC = 25 °C
Low reverse recovery charge; rugged against parasitic turn-on at 0 V gate

Specifications and process

SiC Schottky Diodes

A SiC Schottky barrier diode is a majority-carrier rectifier with no minority-carrier reverse recovery, used where a silicon fast recovery diode would waste switching energy. OCENME supplies a 650 V, 20 A SiC Schottky family with 1.34 V forward drop, 130 A surge current and a 175 °C junction rating, in TO-220AC, TO-220FAC and TO-247 outlines..

20 A (IO at TC = 135 °C)
175 °C maximum

Specifications and process

Fast Recovery Diodes

A fast recovery diode is a PN rectifier engineered for short reverse recovery, so it can freewheel in a switching converter without dominating turn-on loss in the opposing switch. OCENME supplies fast recovery diodes from 200 V to 1500 V in TO-220, TO-247, TO-3P, TO-252 and TO-263 packages, with Trr and IFSM stated per ordering code in the datasheet..

1 A to 60 A depending on package and voltage class
Single, common cathode and common anode duals where the package allows

Specifications and process

Bridge Rectifiers

A bridge rectifier is four diodes arranged so both half-cycles of an AC input produce the same DC polarity, which makes it the first stage of almost every offline power supply. OCENME assembles single-phase bridges from 1 A to 50 A in twelve package families including GBU, GBJ, KBJ, KBP, MSB, HBS, MBF and ABS, with glass-passivated die and 100% forward-drop and reverse-leakage test..

400 V, 600 V, 800 V, 1000 V
Through-hole in-line, and case-mount with heatsink tab

Specifications and process

Comparison

Which product family fits your part?

The deciding question is almost never material — it is geometry and volume. Use the table below, then confirm with the DFM review.

Attribute	CNC Machined	CNC Turned	Sheet Metal	Prototypes
Geometry	Prismatic, pockets, contours	Rotational, threads	Flat, formed, welded	Any, production intent
Tolerance	±0.005 mm	±0.005 mm	±0.1 mm	±0.005 mm
Quantity	1 – 100,000	1 – 100,000	50 – 20,000	1 – 50
Lead time	7–15 days	7–12 days	10–18 days	3–7 days
Tooling cost	None	None	None	None
Best at	Complex 3D features	High-volume round parts	Enclosures and frames	Iteration speed

Tooling cost is zero across all four families because none of them require a mould or die. Above roughly 20,000 identical units per year, stamping or casting usually wins on unit cost — we will say so rather than accept work that suits a different process.

Send the part number and the operating conditions

Tell us the voltage class, current, switching frequency and what the device is replacing. You will get a datasheet, a parameter comparison at matched conditions, and a quotation with MOQ and lead time.

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