Power MOSFETs, SiC Devices and Rectifiers for Power Supplies
We supply the switching devices inside adapters, LED drivers, telecom rectifiers, welding machines and solar converters: 30 V to 700 V MOSFETs, 650 V and 800 V SiC devices, and rectifiers from 1 A to 50 A, with discrete IGBTs in the wider catalogue. Die from qualified foundries, packaged and tested in Shenzhen at 50 million units per month.
Shenzhen Hexin Electronics Co., Ltd. designs, packages and tests power semiconductor devices under the OCENME brand, operating from Shenzhen, China since 2011. The range covers power MOSFETs from 30 V to 700 V, silicon carbide MOSFETs at 650 V and 800 V, 650 V SiC Schottky diodes, fast recovery diodes from 200 V to 1500 V, bridge rectifiers from 1 A to 50 A and discrete IGBTs, packaged on automated lines with lot-level traceability under an ISO 9001:2015 quality system and SGS environmental test reporting.
Six device families, one packaging plant
Each product page states the voltage classes, the on-resistance or forward drop, the packages and what we cannot do with that family. Ordering codes come with a datasheet, not an extrapolation from the family name.
Low & Medium Voltage MOSFETs
A low voltage power MOSFET is an N-channel switching device used below 200 V, where conduction loss dominates and on-resistance decides efficiency. OCENME supplies 30 V to 200 V trench and shielded-gate (SGT) MOSFETs from 1.6 mΩ on-resistance and 220 A continuous drain current, in TO-220, TO-252, TO-263, TO-262 and PDFN 5×6 packages, packaged in Shenzhen at 50 million units per month..
Specifications and boundaries
High Voltage & Super Junction MOSFETs
A high voltage MOSFET is an N-channel switch rated between 400 V and 800 V, used in offline power supplies where the drain sees rectified mains plus leakage-inductance ringing. OCENME supplies 500 V to 700 V planar MOSFETs and 650 V super junction MOSFETs from 150 mΩ, at continuous drain currents of 7 A to 28 A, in TO-220F, TO-262F, TO-263 and TO-252 packages..
Specifications and boundaries
SiC MOSFETs
A silicon carbide MOSFET is a wide-bandgap switch that replaces a silicon super junction device at the same voltage while removing most of the body-diode reverse recovery loss. OCENME supplies 650 V and 800 V SiC MOSFETs from 11 A to 20 A in TO-252 and TO-220F, with a 175 °C junction rating, for PFC stages, LLC converters and chargers running above 30 kHz..
Specifications and boundaries
SiC Schottky Diodes
A SiC Schottky barrier diode is a majority-carrier rectifier with no minority-carrier reverse recovery, used where a silicon fast recovery diode would waste switching energy. OCENME supplies a 650 V, 20 A SiC Schottky family with 1.34 V forward drop, 130 A surge current and a 175 °C junction rating, in TO-220AC, TO-220FAC and TO-247 outlines..
Specifications and boundaries
Fast Recovery Diodes
A fast recovery diode is a PN rectifier engineered for short reverse recovery, so it can freewheel in a switching converter without dominating turn-on loss in the opposing switch. OCENME supplies fast recovery diodes from 200 V to 1500 V in TO-220, TO-247, TO-3P, TO-252 and TO-263 packages, with Trr and IFSM stated per ordering code in the datasheet..
Specifications and boundaries
Bridge Rectifiers
A bridge rectifier is four diodes arranged so both half-cycles of an AC input produce the same DC polarity, which makes it the first stage of almost every offline power supply. OCENME assembles single-phase bridges from 1 A to 50 A in twelve package families including GBU, GBJ, KBJ, KBP, MSB, HBS, MBF and ABS, with glass-passivated die and 100% forward-drop and reverse-leakage test..
Specifications and boundariesAssembly, test and failure analysis under one roof
Packaging is not a commodity step. Die attach voiding, bond strength and mould compound adhesion decide whether a device survives ten years in a humid cabinet, and each of them is measurable — so we measure them.
Semiconductor Packaging
Automated power device packaging in Shenzhen: die attach, wire bonding, moulding, trim and form, 100% electrical test.
Capability details
Reliability Testing
In-house reliability testing to JESD22 methods: HTRB, H3TRB, HT/HU, temperature cycling, thermal shock, solderability, HTSL, RSH and HPC..
Capability details
SiC Device Assembly
SiC MOSFET and SiC Schottky die assembly for 175 °C operation: high-temperature die attach, copper bonding, high-Tg moulding and two-point RDS(on) test..
Capability details
Custom Device Development
Custom power device development: die selection with foundry partners, DFN/QFN/TOLL outline qualification, custom marking and packing for OEM programmes..
Capability details
Traceability & Quality System
Lot traceability from foundry wafer to shipping carton through ERP, MES and WMS records, under an ISO 9001:2015 quality system with PCN change control..
Capability detailsWhere our devices end up, and what each application demands
Power Supplies & Adapters
A switching power supply converts AC mains into a regulated DC output through a high-frequency converter, and its efficiency is decided by which devices switch and rectify. OCENME supplies the device set for adapters and open-frame supplies from 5 W to 300 W: 650 V super junction MOSFETs for the primary, 30–100 V MOSFETs for synchronous rectification, and bridge rectifiers from 1 A to 8 A for the input..
Requirements and typical partsLED Drivers & Lighting Power
An LED driver is a current source, not a voltage source, so its devices are chosen for the current loop and the thermal environment rather than for output voltage alone. OCENME supplies 500–650 V MOSFETs, fast recovery diodes and bridge rectifiers for isolated flyback, non-isolated buck and PFC boost LED drivers from 5 W to 200 W..
Requirements and typical partsTelecom & UPS Power
Telecom rectifiers and UPS systems run continuously at high ambient with a service life measured in a decade, so device selection is driven by derating margin and long-term stability rather than by peak efficiency. OCENME supplies 650 V super junction MOSFETs, SiC Schottky diodes and fast recovery diodes for rectifier PFC stages and UPS inverter legs, with HTRB and H3TRB reports per part number..
Requirements and typical partsWelding Equipment
An inverter welding machine runs a high-frequency transformer at high current and high duty cycle, so its diodes must survive repeated high di/dt commutation rather than steady-state current. OCENME supplies 600–1200 V fast recovery diodes and 500–650 V MOSFETs for welding inverter stages, with IFSM, Trr and thermal cycling data stated per part number..
Requirements and typical partsSolar & Energy Storage
A solar inverter or battery converter moves power in both directions at high frequency, so device choice is driven by switching loss and body-diode behaviour rather than by conduction loss alone. OCENME supplies 650 V and 800 V SiC MOSFETs, 650 V SiC Schottky diodes and 650 V super junction MOSFETs for boost stages and battery converters from 200 W to 10 kW..
Requirements and typical partsA fab-lite supplier, stated plainly
Die are fabricated by qualified foundries. We do the packaging, the test, the reliability work and the device definition with our foundry partners — and we notify customers before a die source changes, because a silent change is the failure nobody can reproduce.
That structure is why we can quote 700 V MOSFETs and 650 V SiC devices from one plant without owning a wafer fab, and why we say no to automotive qualification rather than pretend the paperwork exists.
| Legal entity | Shenzhen Hexin Electronics Co., Ltd. |
|---|---|
| Brand | OCENME |
| Founded | 2011 |
| Packaging capacity | 50 million units / month |
| Quality system | ISO 9001:2015 |
| Reliability tests in-house | 9 types to JESD22 methods |
| R&D investment | CNY 10 million in 2024 |
| Location | Shenzhen, Guangdong, China |
Selection notes written for the engineer, not the catalogue
Definitions, crossovers and failure modes — the questions that arrive before a purchase order, answered with numbers and with the conditions attached to them.
What Is a Power MOSFET? Definition and Use
A power MOSFET is a voltage-controlled switch for currents above 1 A. How the structure works, what RDS(on) costs, and which voltage class fits which circuit.
Read articleHow to Read a MOSFET Datasheet Without Being Misled
The six numbers that decide whether a MOSFET works in your circuit, and four ways datasheets flatter a part: conditions, temperature, sampling and axes.
Read articleMOSFET, IGBT or SiC: Which Switch to Choose
A decision guide by voltage, current and frequency, with the crossover points where each technology wins and the losses that decide them.
Read articleQualification, MOQ and documentation
What power semiconductor products does OCENME supply?
Power MOSFETs from 30 V to 700 V, silicon carbide MOSFETs at 650 V and 800 V, 650 V SiC Schottky diodes, fast recovery diodes from 200 V to 1500 V, single-phase bridge rectifiers from 1 A to 50 A, and discrete IGBTs in the wider catalogue. Devices are packaged in Shenzhen at a stated capacity of 50 million units per month under ISO 9001:2015, with SGS environmental test reporting.
Are you a wafer fab or a packaging company?
A packaging and design company. Die come from qualified foundries; we handle die attach, bonding, moulding, final test and reliability testing in our own plant, and we design custom devices and outlines with our foundry partners. We do not claim a proprietary wafer fab, because we do not have one.
Is your product range automotive qualified?
No. We hold ISO 9001:2015 for the quality system and we do not claim AEC-Q101, PPAP or IATF 16949. If your programme requires automotive qualification, that is a supplier-selection criterion we will not meet, and telling you now is cheaper than an audit.
What is the minimum order quantity?
MOQ is set per ordering code and packing format, because a tape-and-reel quantity differs from a tube quantity, and it is confirmed in the quotation rather than published as a blanket number. Sample quantities for evaluation are available before a production order.
Which reliability data can you supply?
HTRB, H3TRB, high-temperature storage, temperature cycling, thermal shock, solderability, RSH and HPC are run in-house to JESD22 methods. Reports are issued per part number and lot, with sample size, conditions and read points. A report without those three numbers is not evidence.
Can you replace a specific competitor part number?
Send the full part number, package and operating conditions — switching frequency, gate drive voltage, current waveform and heatsinking. We compare voltage class, on-resistance at your gate voltage, gate charge, output capacitance and body diode behaviour, and quote only where the comparison holds at matched test conditions.
Send the part number and the operating conditions
Tell us the voltage class, current, switching frequency and what the device is replacing. You will get a datasheet, a parameter comparison at matched conditions, and a quotation with MOQ and lead time.